Electrostatic Discharge Characteristics of SiGe Source/Drain PNN Tunnel FET
نویسندگان
چکیده
منابع مشابه
SiGe heterostructures for FET applications
The high room-temperature carrier mobilities which have recently been observed for both electrons and holes in Si/SiGe heterostructures and the possibility of further improvements offer the prospect of silicon-based field effect transistors (FETs) with performances matching those of bipolar transistors and III–V modulation-doped FETs. In this article the electrical properties of this semiconduc...
متن کاملDrive current boosting of n-type tunnel FET with strained SiGe layer at source
Though silicon tunnel field effect transistor (TFET) has attracted attention for sub-60mV/decade subthreshold swing and very small OFF current (IOFF), its practical application is questionable due to low ON current (ION) and complicated fabrication process steps. In this paper, a new n-type classical-MOSFET-alike tunnel FET architecture is proposed, which offers sub-60mV/decade subthreshold swi...
متن کاملDesign and Optimization of a P+N+IN+ Tunnel FET with Si Channel and SiGe Source
A Silicon tunnel FET with Si1-x Gex source is investigated and optimized for improved performance. In order to optimize the device performance, Germanium mole fraction and the length of the SiGe region is varied and the optimum values are obtained. Moreover, the source/channel hetero-junction is assumed graded. The grading distance is varied from zero (abrupt hetero-junction) to total channel l...
متن کاملAn extensive electrostatic analysis of dual material gate all around tunnel FET (DMGAA-TFET)
In the proposed work an analytical model of a p-channel dual material gate all around tunnel FET (DMGAA-TFET) is presented and its performance is compared with the conventional GAA-TFET. The electrostatic potential profile of the model is obtained using 2-D Laplace’s solution in the cylindrical coordinate system. A quantitative study of the drain current has been carried out using electric fiel...
متن کاملAnalysis of GAA Tunnel FET using MATLAB
In order to improve the energy efficiency of next generation digital systems, transistors withSubthreshold SlopeReferences Q. Zhang, W. Zhao, and A. Seabaugh, "Low-subthreshold-swing tunnel
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Electronics
سال: 2021
ISSN: 2079-9292
DOI: 10.3390/electronics10040454